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Non-linear and dot-dependent Zeeman splitting in GaAs/AlGaAs quantum dot arrays

机译:Gaas / alGaas量子点中的非线性和点依赖塞曼分裂   阵列

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摘要

We study the Zeeman splitting in lateral quantum dots that are defined inGaAs-AlGaAs het- erostructures by means of split gates. We demonstrate anon-linear dependence of the splitting on magnetic field and its substantialvariations from dot to dot and from heterostructure to het- erostructure. Thesephenomena are important in the context of information processing since thetunability and dot-dependence of the Zeeman splitting allow for a selectivemanipulation of spins. We show that spin-orbit effects related to the GaAs bandstructure quantitatively explain the ob- served magnitude of the non-lineardependence of the Zeeman splitting. Furthermore, spin-orbit effects result in adependence of the Zeeman splitting on predominantly the out-of-plane quantumdot confinement energy. We also show that the variations of the confinementenergy due to charge disorder in the heterostructure may explain the dependenceof Zeeman splitting on the dot position. This position may be varied bychanging the gate voltages which leads to an electrically tunable Zeemansplitting.
机译:我们研究了通过分裂门在GaAs-AlGaAs异质结构中定义的横向量子点中的Zeeman分裂。我们证明了磁场分裂的非线性依赖性及其从点到点以及从异质结构到异质结构的实质性变化。这些现象在信息处理中非常重要,因为塞曼分裂的可调谐性和点相关性允许对自旋进行选择性操纵。我们表明,与GaAs能带结构相关的自旋轨道效应定量地解释了塞曼分裂非线性相关性的观测幅度。此外,自旋轨道效应导致​​塞曼分裂主要依赖于平面外量子点限制能量。我们还表明,由于异质结构中的电荷无序而引起的约束能量的变化可能解释了塞曼分裂对点位置的依赖性。可以通过改变栅极电压来改变该位置,这会导致电可调的Zeemansplitting。

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